Oxygen vacancy supported memory

In a recent paper just published online in the high impact

a

journal Advanced Functional Materials, the researchers investigated why hafnium oxide based devices are so promising for memory applications and how the material can be tuned to perform at the desired level. This knowledge could be the base for future mass application in all kind of electronic devices.

This novel kind of non-volatile memory saves information by changing the electrical resistance of a metal-insulator-metal structure. The high respectively low resistive states represent zero and one and do not vanish even when the computer is turned off. The main principle of this resistive random access memory (RRAM) has been known for several years, but researchers and developers are still fighting to bring it into real live applications.

Memory based on hafnium oxide is particularly interesting due to its superior properties. However, the devices still cannot be fabricated with low variability and low spread of electronic properties as required for large scale production. Furthermore, the switching behavior is complex and still has not been fully understood.

Read more at: https://phys.org/news/2017-07-oxygen-vacancy-memory.html#jCp