Researchers shape the future of nano-electronics

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The material,  (hBN), is similar to

graphene and can be formed and stabilized to a layered thickness of one atom. This synthesis of hBN in a controlled layer-by-layer fashion is critical to a number of applications, including tunneling barriers, used in transistors for low power devices, atomically thin capacitors, and two-dimensional (2D) transistors, which are smaller and use much less power than traditional silicon transistors.
"Fabricating devices from atomically thin 2D layers represents the future of nano-electronics," states Dr. Michael Snure, AFRL senior research physicist. "This development significantly increases device density, improving flexibility and significantly reducing power requirements."
As a 2D material, hBN has been of international interest for close to a decade. Researchers with AFRL's Sensors Directorate have been working on experimental methods for developing this technology since 2013, with Dr. Snure leading the effort.  Dr. Stefan Badescu, AFRL research physicist, joined the team in 2015 to lead the computational modeling research that has assisted the team with understanding the system's properties and the mechanism for growth.


Read more at: https://phys.org/news/2017-05-future-nano-electronics.html#jCp