In some contexts, it is extremely important that
Researchers at Linköping University and the University of California in Berkeley have now finally been able to observe the migration of atoms between the layers of a thin film. They used scanning transmission electron microscopy (STEM) with such a high resolution that it was possible to image the positions of individual atoms in the material. The specimen they studied was a thin film in which layers of a metal, hafnium nitride (HfN), around 5 billionths of a metre thick, alternate with layers of a semiconductor, scandium nitride (ScN).
The properties of the HfN/ScN layers make this material a suitable candidate for use in, for example, coating technology and microelectronics. It is for stability reasons very important that the layers of metal and semiconductor do not mix. Problems arise if the atoms diffuse across an interlayer forming a closed bridge between the layers in the film, similar to an electric short circuit.
"The material we have studied acts as a perfect model system, but this type of diffusion occurs in nearly all materials. Metals and semiconductors are found in all the electronic components used in in mobile phones, computers, etc. This is why it is important that materials scientists understand this type of diffusion," says Magnus Garbrecht, associate senior lecturer in the Department of Physics, Chemistry and Biology at Linköping University.
Read more at: https://phys.org/news/2017-05-elusive-atomic-motion-captured-electron.html#jCp
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